| |
| Mainly
focused on RF, mixed signal and high voltage applications, ID MOS engaged
partnerships with a selection of european and far-east foundries in order
to have an easy access to such technological options. The multi-foundry
strategy brings the advantage of a wide process panel allowing ID MOS
to offer the best compromise between technical parameters and prices. |
|
 |
The modular mixed
signal technology used is suitable for standard cell, semi-custom and full
custom designs, to serve Automotive, Consumer, Industrial and Telecommunication
markets.
Process
offer at a glance:
|
Processes
|
·
N-Well
CMOS
·
BiCMOS
|
|
Lithographies
|
·
1,0µm
: CMOS for medium Voltage products
·
0.8/0.6µm
: CMOS/BiCMOS for high frequency products
·
0.5/0.13µm
: CMOS for high density products
|
|
Double
Poly
|
Resistors
and Capacitors
|
|
High
voltage
|
Up
to 100Volts
|
|
Low
voltage
|
Down
to 1,5Volts
|
|
Embedded memories
|
RAM/ROM/OTP
Flash / EEPROM
|
|
High
frequency NPN Transistor
|
High
precision BSIM3V3 Model for simulation
|
|
ESD
protection
|
In
accordance with MIL-STD
|
|
